Description
MAT01AH Bipolar Transistors – BJT MATCHED MONOLITHIC DUAL N
FEATURES
- Mounting Style: Through Hole
- Transistor Polarity: NPN
- Configuration: Dual
- Collector-Emitter Voltage VCEO Max: 45 V
- Collector-Base Voltage VCBO: 45 V
- Emitter-Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 800 mV
- Maximum DC Collector Current: 25 mA
- Gain Bandwidth Product fT: 450 MHz
- Minimum Operating Temperature: -55 °C
- Maximum Operating Temperature: +125 °C
SPECIFICATION
- DC Collector/Base Gain hFE Min: 500 at 10 uA, 15 V
- Pd-Power Dissipation: 500 mW
- Dimension: 4.7 × 9.4 × 9.4 mm
- Additional information
- Gross weight: 0.75 g
- Manufacturer part number: MAT01AH
Reviews
There are no reviews yet.