PNP Bipolar Junction Transistor A1015

Description

The A1015 is a silicon PNP epitaxial bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is commonly used in audio amplification stages, driver circuits, and low-power signal processing due to its moderate voltage and current handling, good current gain, and low noise characteristics.

FEATURES

• Collector-Emitter Voltage: –50 V
• Collector-Base Voltage: –50 V
• Emitter-Base Voltage: –5 V
• Collector Current: –150 mA
• Power Dissipation: ~400 mW
• Current Gain: ~70–400
• Transition Frequency: ~80 MHz
• Noise Figure: ~1 dB
• Mounting Style: Through Hole

SPECIFICATION

• Dimension: 4.7 × 3.7 × 4.9 mm
• Additional information
• Gross weight: 0.35 g
• Manufacturer part number: A1015