N-Channel Power MOSFET Transistor 2SK3878

Description

The 2SK3878(F) is a high-voltage N-Channel Power MOSFET (Field Effect Transistor) designed for switching regulator applications and power conversion systems. It operates in enhancement mode and is capable of handling high voltage and current, making it suitable for industrial and power electronics such as SMPS (Switch-Mode Power Supplies), UPS systems, and motor controllers.

FEATURES

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 900 V
• Gate-Source Voltage: ± 30 V
• Continuous Drain Current: 9 A
• Drain-Source ON-Resistance: ~1.0 Ω–1.3 Ω (typical at Vgs = 10 V)
• Power Dissipation: 150 W
• Operating Temperature Range: –55 °C … +150 °C
• Enhancement Mode: Yes
• Channel Mode: Enhancement
• Typical Gate Charge: ~60 nC
• Leakage Current: Low
• Forward Transfer Admittance: High
• Mounting Style: Through Hole

SPECIFICATION

• Dimension: 15.9 × 11.39 × 19 mm
• Additional information
• Gross weight: 4.8 g
• Manufacturer part number: 2SK3878