N-Channel Power MOSFET IRFB4115PBF

Description

The IRFB4115PBF is a high-performance N-channel power MOSFET designed for demanding power electronics applications. It uses Infineon’s HEXFET® and Trench MOSFET technology, which provides extremely low on-resistance and fast switching performance in a rugged TO-220AB through-hole package. This device is optimized for high-efficiency switching, synchronous rectification, and heavy-current handling in both industrial and consumer power systems.

FEATURES

• Operating Temp:−55 °C to +175 °C
• Drain-Source Voltage: 150 V
• Continuous Drain Current: ~104 A
• On-Resistance: 9.3 mΩ – 11 mΩ
• Power Dissipation: ~380 W
• Gate-Source Threshold: ~4 V – 5 V max
• Gate-Source Voltage: ±20 V
• Maximum Gate Charge: ~77 – 120 nC
• Input Capacitance: ~5270 pF
• Mounting Style: Through Hole

SPECIFICATION

• Dimension: 10.6 × 4.8 × 9 mm
• Additional information
• Gross weight: 1.92 g
• Manufacturer part number: IRFB4115PBF