High-Voltage NPN Silicon Power Darlington Transistor MJ10009

Description

The MJ10009 is a high-voltage, high power NPN silicon Darlington transistor engineered for robust performance in inductive switching circuits where fall time and reliability are critical. It is capable of handling up to 500 V collector-emitter voltage, 20 A continuous collector current, and 175 W power dissipation. Housed in a TO-3 metal can package with flange mount, it is suited for industrial power supply, motor drive, inverter and switching regulator applications.

FEATURES

• Collector-Emitter Voltage: 500 V
• Collector Current: 20 A
• Power Dissipation: 175 W
• DC Current Gain: ~30-40
• Vce Saturation: ~3.5 V @ 2 A / 20 A
• Inductive Crossover Time: ~1.6 µs (10 A @ 100 °C)
• Inductive Storage Time: ~3.5 µs (10 A @ 100 °C)
• Operating Junction Temp: –65 to +200 °C
• Mounting Style: Through Hole

SPECIFICATION

• Dimension: 24 × 15.24 × 8 mm
• Additional information
• Gross weight: 16 g
• Manufacturer part number: MJ10009