High-Power NPN Transistor 2SC3998

Description

The 2SC3998 is a silicon NPN triple-diffused planar transistor in a TO-3PL / TO-3PBL package intended for high-power, high-voltage applications such as horizontal deflection output in CRT circuits and industrial power switches. It features robust breakdown characteristics and high power dissipation capability.

FEATURES

• Collector-Base Voltage: ≥ 1500 V
• Collector-Emitter Voltage: ≥ 800 V
• Emitter-Base Voltage: ~6 V
• Continuous Collector Current: 25 A
• Pulse Collector Current: ~50 A
• Collector Power Dissipation: 250 W
• Junction Temperature: 150 °C
• Storage Temperature: –55 … +150 °C
• Mounting Style: Through Hole

SPECIFICATION

• Dimension: 26 × 20.7 × 5.45 mm
• Additional information
• Gross weight: 9 g
• Manufacturer part number: 2SC3998