Dual N-Channel Power MOSFET IC IRF7101

Description

The IRF7101 is a dual N-Channel HEXFET® Power MOSFET in an SOP-8 (SO-8) surface-mount package. It integrates two low-voltage, low-resistance N-channel MOSFET transistors optimized for high efficiency, fast switching, and rugged performance in power applications. Advanced manufacturing processes lower on-resistance per silicon area and improve thermal characteristics. The customized SOP-8 leadframe supports enhanced thermal performance and space-efficient dual-die integration.

FEATURES

• Operating Temperature Range: –55 °C to +150 °C
• Gate-Source Voltage: ±12 V
• Low On-Resistance: 0.10 Ω
• Drain-Source Voltage: 20 V
• Max Continuous Drain Current: 3.5 A
• Max Power Dissipation: ≈2 W
• Mounting Style: Surface Mount

SPECIFICATION

• Dimension: 4.80 × 3.80 × 1.35 mm
• Additional information
• Gross weight: 0.5 g
• Manufacturer part number: IRF7101