Insulated Gate Bipolar Transistor K40T120
Description
The K40T120 is a high‑power Insulated Gate Bipolar Transistor (IGBT) designed for 1200 V voltage-class power switching applications. The device combines trench and field‑stop technologies to optimize conduction and switching performance, while a fast recovery emitter‑controlled diode enhances dynamic switching efficiency. It is RoHS compliant and built for use in demanding industrial, renewable energy, and power conversion systems.
FEATURES
- Collector‑Emitter Voltage: 1200 V
- Continuous Collector Current: ~40 A (T<sub>C</sub>=100 °C)
- Gate‑Emitter Voltage: ±20 V (max)
- Operating Temperature: ~‑40 °C to +150 °C
- Short‑Circuit Withstand Time: ~10 μs
- Diode: Fast recovery emitter‑controlled diode
- RoHS Compliance: Yes
- Mounting Style: Through Hole
SPECIFICATION
- Dimension: 15.8 × 20 × 5 mm
- Additional information
- Gross weight: 4.5 g
- Manufacturer part number: K40T120
