Low-Power CMOS Static RAM IC K6X4016T3F-UF70 N

Description

The K6X4016T3F-UF70 N is a high-performance CMOS Static Random-Access Memory (SRAM) device from Samsung Semiconductor, designed for low-power, low-voltage applications requiring fast and reliable parallel data storage. It is organized as 256 K × 16 bits, offering 4 Mbit memory density with 70 ns access time for quick read/write operations. The IC is fabricated using advanced CMOS technology and is typically supplied in a LS-TSOP44 (Thin Small-Outline Package, 44 pins) with 0.8 mm lead pitch and lead-free finish.

FEATURES

• Access Time: 70 ns
• Supply Voltage: 2.7 V to 3.6 V (nominal 3.3 V)
• Operating Temp Range: –40 °C to +85 °C
• Data Bus Width: 16 bits
• I/O Type: CMOS common
• Outputs: Three-state
• Mounting Style: Surface Mount

SPECIFICATION

• Dimension: 18.41 × 10.16 × 1.2 mm
• Additional information
• Gross weight: 0.5 g
• Manufacturer part number: K6X4016T3F-UF70 N