Description
The TIP142 is a high-power NPN Darlington bipolar junction transistor (BJT) designed for demanding linear, amplifier, and switching applications. It integrates two NPN transistors in a monolithic Darlington configuration, providing high current gain and low saturation voltage, and includes an integrated antiparallel collector-emitter diode for enhanced robustness.
FEATURES
- Maximum Collector-Emitter Voltage: 100 V
- Maximum Collector-Base Voltage: 100 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 10 A
- DC Current Gain: 500–1000
- Power Dissipation: 125 W
- Saturation Voltage: ~3 V
- Operating Temp: −65 °C to +150 °C
- Mounting Style: Through Hole
SPECIFICATION
- Dimension: 15.75 × 5.15 × 20.15 mm
- Additional information
- Gross weight: 6.5 g
- Manufacturer part number: TIP142





